METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

One of the objectives of the present invention is to provide an oxide semiconductor appropriate for being used for a semiconductor device or the semiconductor device which uses the oxide semiconductor. For the semiconductor device which uses an In-Ga-Zn-O-based oxide semiconductor layer for a channel forming area of a transistor, the In-Ga-Zn-O-based oxide semiconductor layer has a structure in which crystal grains expressed as InGaO_3(ZnO)_m (m = 1) are included in a non-crystalline structure expressed as InGaO_3(ZnO)_m (M > 0).