| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method, a substrate processing method, a substrate processing apparatus and a program, which can improve productivity under a low-temperature condition in comparison with a case without the present configuration.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming thin films on a wafer 200 by performing predetermined times, a cycle including a process of supplying an IPCS gas to a wafer 200 in a processing chamber 201, and a process of supplying an NHgas to the wafer 200 in the processing chamber 201. In the process of supplying the NHgas, a supply flow rate of the NHgas changes in multi-step. |
