发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor device includes a p-type semiconductor region in contact with a bottom face of a trench gate, wherein the p-type semiconductor region includes a first p-type semiconductor region containing a first type of p-type impurities and a second p-type semiconductor region containing a second type of p-type impurities. The first p-type semiconductor region is located between the trench gate and the second p-type semiconductor region. In a view along the depth direction, the second p-type semiconductor region is located within a part of the first p-type semiconductor region. A diffusion coefficient of the second type of p-type impurities is smaller than a diffusion coefficient of the first type of p-type impurities. |
申请公布号 |
WO2016113797(A1) |
申请公布日期 |
2016.07.21 |
申请号 |
WO2015JP06178 |
申请日期 |
2015.12.11 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA;DENSO CORPORATION |
发明人 |
NISHIMURA, SHINYA;FUJIWARA, HIROKAZU;SOEJIMA, NARUMASA;TAKEUCHI, YUICHI |
分类号 |
H01L29/78;H01L29/06;H01L29/66;H01L29/739 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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