| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a template for nano-imprint lithography capable of precisely forming a desired reversion pattern by preventing deformation of a resist pattern.SOLUTION: A hard mask layer is provided on a principal plane of a substrate that is a template for nano-imprint lithography, and a resist pattern is formed on the hard mask layer. At least a coating film in a lowermost layer is formed at a temperature lower than a glass transition temperature of resin constituting the resist pattern using an atomic layer deposition method, and thereafter, the coating film on an upper face of the resist pattern is removed to expose the resist pattern. The hard mask layer exposed after removing the resist pattern is etched to form a hard mask pattern, and the hard mask pattern is used for an etching mask to etch the substrate, thereby forming a desired transfer pattern. |
