发明名称 PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a pattern forming method excellent in exposure latitude (EL) and performance of preventing development defects. <P>SOLUTION: The pattern forming method includes: forming a film by using an active ray-sensitive or radiation-sensitive resin composition containing (A) a resin whose solubility with an alkali developing solution is increased by the action of an acid and (B) a compound that generates an acid having a moiety structure expressed by general formula (LD) by irradiation with active rays or radiation; exposing the film; and developing the exposed film by using an aqueous solution of tetramethylammonium hydroxide having a concentration of less than 2.38 mass%. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011186091(A) 申请公布日期 2011.09.22
申请号 JP20100049940 申请日期 2010.03.05
申请人 FUJIFILM CORP 发明人 FUKUHARA TOSHIAKI
分类号 G03F7/32;C07C309/17;C07C309/19;C07C309/24;C07C381/12;G03F7/004;G03F7/039;H01L21/027 主分类号 G03F7/32
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