| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem of the infeasibility of the perfect alignment in the case of transfer packaging utilizing the conventional trapezoidal TFT chip as the insertion into the recessed parts of a substrate is difficult and even if the chip is inserted into the recessed parts, lateral and longitudinal directions are sometimes reversed. SOLUTION: The perfect self-alignment of the ball silicon-like TFT chip is realized by coating the hemispherical side on the side formed with TFT elements, concentric source electrodes and drain electrodes with a protective insulating film, making the external diameter of the coating part larger than the inner diameter of the recessed parts of the substrate, forming gate electrode terminals on the other hemispherical part, forming the gate electrode terminals on the inner side of the recessed parts of the substrate as well and forming through-holes for source and drain electrode contact at the insulating film of the pole silicon after insertion into the holes of the substrate.</p> |
