| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile memory capable of lowering a power source voltage and a power consumption, a nonvolatile memory capable of being raised in its function and increased in multi-functions and reduced in size and a semiconductor device having the nonvolatile memory. SOLUTION: The nonvolatile memory comprises a memory cell array constituted of complete depletion type memory TFTs(thin film transistors), drive circuits of memory cells and another peripheral circuit, which are integrally formed on the same substrate. Further, a pixel part for constituting the semiconductor device, a drive circuit for driving the pixel part and the nonvolatile memory are integrally formed on a substrate having an insulating surface. The complete depletion type memory TFTs are used to thereby lower the power source voltage and the power consumption of the nonvolatile memory, and improve a number of rewriting times. The nonvolatile memory and the semiconductor device can be realized to be raised in its function and increased in multi-functions and reduced in size.</p> |
