ZnO THIN FILM AND SEMICONDUCTOR ELEMENT

摘要

Provided are a ZnO thin film wherein unintended impurity doping is suppressed, and a semiconductor element. The ZnO thin film has a main surface, which is composed of MgxZn1-xO (0=x<1) containing a p-type impurity, and satisfies at least a condition where density of observed hexagonal pits are 5x106 pits/cm2 or less or a condition where a recessed section having a plurality of fine crystal protrusions are formed at the bottom is not observed, in observation by means of an atomic force microscope.