发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which enables suppression of separation and damage of a wiring layer in a support substrate separating step, a resin-sealed body cutting step, etc.SOLUTION: A separation layer 2 made of a thermoplastic resin and a wiring layer 3 are formed in order on a support substrate 1. An organic insulating film present in dicing regions D of the wiring layer 3 is eliminated. Semiconductor chips 9 are mounted on the wiring layer 3 in device forming regions, respectively. A sealing resin layer 12 covering the plurality of semiconductor chips 9 is formed on the separation layer 2. The separation layer 2 is heated to separate a resin-sealed body composed of the wiring layer 3, the semiconductor chips 9, and the sealing resin layer 12 from the support substrate 1. The resin-sealed body is cut based on the dicing regions D to dice a structure making up the semiconductor device.
申请公布号 JP2011204765(A) 申请公布日期 2011.10.13
申请号 JP20100068407 申请日期 2010.03.24
申请人 TOSHIBA CORP 发明人 HONMA SOICHI;MIURA MASAYUKI;KAMOTO TAKU;HONGO SATOSHI
分类号 H01L23/12 主分类号 H01L23/12
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