发明名称 Plasmonic interface and method of manufacturing thereof
摘要 A method of manufacturing a layered material stack that includes a plasmonic interface between a plasmonic material and optical waveguide material is disclosed. The method includes providing a substrate layer, disposing a layer of plasmonic material on the substrate layer, depositing a metal constituent of an optical waveguide material directly onto the layer of plasmonic material, and anodizing the metal constituent of the optical waveguide material to form an optically transparent oxide of the metal constituent configured to couple light into the layer of plasmonic material, with the optically transparent oxide of the metal constituent forming an optical waveguide structure.
申请公布号 US9465160(B2) 申请公布日期 2016.10.11
申请号 US201313970852 申请日期 2013.08.20
申请人 General Electric Company 发明人 Keimel Christopher Fred;Hewgley John Brian;Becerra Juan Jose
分类号 G02B6/02;C25D11/26;C25D11/04;B32B37/12;B32B37/24;G02B6/122 主分类号 G02B6/02
代理机构 Ziolkowski Patent Solutions Group, SC 代理人 Ziolkowski Patent Solutions Group, SC ;Testa Jean K.
主权项 1. A method of manufacturing a layered material stack comprising: providing a substrate layer; disposing a layer of plasmonic material on the substrate layer; depositing a metal constituent of an optical waveguide material directly onto the layer of plasmonic material; and anodizing the metal constituent of the optical waveguide material to form an optically transparent oxide of the metal constituent configured to couple light into the layer of plasmonic material, the optically transparent oxide of the metal constituent forming an optical waveguide structure; wherein anodizing the metal constituent of the optical waveguide material comprises applying an electric current to the metal constituent of the optical waveguide material through the layer of plasmonic material, the layer of plasmonic material functioning as an electrode for performing the anodization.
地址 Schenectady NY US