| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal growing apparatus for producing a sapphire single crystal, whose protruding degree is small and in whose crystal no bubble is mixed. SOLUTION: This single crystal growing apparatus for producing the sapphire single crystal has the following structure. The principal part of the apparatus consists of a high-frequency induction coil, a refractory crucible, an iridium crucible, a heat insulating material, a refractory crucible-support cylinder, and a cylindrical heater. The iridium crucible is housed in the refractory crucible through the heat insulating material. The refractory crucible-support cylinder, inside which the cylindrical heater is provided, is provided on the bottom part of the refractory crucible in a manner that the upper face of the cylindrical heater is in contact with the bottom face of the refractory crucible. All of above articles are housed in a spatial part inside the high-frequency induction coil. COPYRIGHT: (C)2005,JPO&NCIPI
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