| 摘要 |
A method of making an IC substrate includes the steps of: a) preparing a substrate having a front side and a back side and half-etching the substrate to form a filling space in the front side of the substrate subject to a predetermined depth and area, b) putting the substrate thus obtained from step a) in a cavity of a mold and employing a polymer filling and mold pressing procedure to fill up the filling space with an insulative polymer, and c) removing the substrate from the mold and half-etching the back side of the substrate body so as to obtain an IC substrate. |
