发明名称 |
Methods for forming nonvolatile memory elements with resistive-switching metal oxides |
摘要 |
Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.
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申请公布号 |
US2008220601(A1) |
申请公布日期 |
2008.09.11 |
申请号 |
US20070714334 |
申请日期 |
2007.03.05 |
申请人 |
KUMAR NITIN;TONG JINHONG;LANG CHI-I;CHIANG TONY;PHATAK PRASHANT B |
发明人 |
KUMAR NITIN;TONG JINHONG;LANG CHI-I;CHIANG TONY;PHATAK PRASHANT B. |
分类号 |
H01L21/20;H01L21/4763 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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