发明名称 |
Method for manufacturing silicon wafers, involves cutting rectangular and silicon block with side surface, where side surfaces of silicon block are smoothed and polished parallel to edge of silicon wafer before cutting |
摘要 |
#CMT# #/CMT# The method involves cutting a rectangular and silicon block with a side surface. The side surfaces of the silicon block are smoothed and polished parallel to an edge of a silicon wafer before cutting. The smoothing and polishing is carried out by a rotary and hollow cylindrical smoothing and polishing tool. The cylindrical wall of the tool has a bonded abrasive grain which includes diamond, silicon carbide or silicon nitride. The smoothing tool has a matrix, which includes a group of a soft metal, a polymer or a resin. #CMT#USE : #/CMT# Method for manufacturing silicon wafers. #CMT#ADVANTAGE : #/CMT# The side surfaces of the silicon block are smoothed and polished parallel to an edge of a silicon wafer before cutting, where the smoothing and polishing is carried out by a rotary and hollow cylindrical smoothing and polishing tool, and hence ensures to reduce the braking rate while manufacturing a silicon wafer. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a perspective view of a silicon block. |
申请公布号 |
DE102007040385(A1) |
申请公布日期 |
2009.03.05 |
申请号 |
DE20071040385 |
申请日期 |
2007.08.27 |
申请人 |
SCHOTT AG |
发明人 |
MENZEL, ANDREAS;SIGMUND, JOCHEN;FUGGER, CHRISTINE |
分类号 |
H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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