发明名称 Method for manufacturing silicon wafers, involves cutting rectangular and silicon block with side surface, where side surfaces of silicon block are smoothed and polished parallel to edge of silicon wafer before cutting
摘要 #CMT# #/CMT# The method involves cutting a rectangular and silicon block with a side surface. The side surfaces of the silicon block are smoothed and polished parallel to an edge of a silicon wafer before cutting. The smoothing and polishing is carried out by a rotary and hollow cylindrical smoothing and polishing tool. The cylindrical wall of the tool has a bonded abrasive grain which includes diamond, silicon carbide or silicon nitride. The smoothing tool has a matrix, which includes a group of a soft metal, a polymer or a resin. #CMT#USE : #/CMT# Method for manufacturing silicon wafers. #CMT#ADVANTAGE : #/CMT# The side surfaces of the silicon block are smoothed and polished parallel to an edge of a silicon wafer before cutting, where the smoothing and polishing is carried out by a rotary and hollow cylindrical smoothing and polishing tool, and hence ensures to reduce the braking rate while manufacturing a silicon wafer. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a perspective view of a silicon block.
申请公布号 DE102007040385(A1) 申请公布日期 2009.03.05
申请号 DE20071040385 申请日期 2007.08.27
申请人 SCHOTT AG 发明人 MENZEL, ANDREAS;SIGMUND, JOCHEN;FUGGER, CHRISTINE
分类号 H01L21/304 主分类号 H01L21/304
代理机构 代理人
主权项
地址