发明名称 |
Method for manufacturing semiconductor wafer |
摘要 |
To provide a method for manufacturing an SOI substrate having a single crystal semiconductor layer having a small and uniform thickness over an insulating film. Further, time of adding hydrogen ions is reduced and time of manufacture per SOI substrate is reduced. A bond layer is formed over a surface of a first semiconductor wafer and a separation layer is formed below the bond layer by irradiating the first semiconductor wafer with H3+ ions by an ion doping apparatus. H3+ ions accelerated by high voltage are separated to be three H+ ions at a semiconductor wafer surface, and the H+ ions cannot enter deeply. Therefore, H+ ions are added into a shallower region in the semiconductor wafer at a higher concentration than the case of using a conventional ion implantation method.
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申请公布号 |
US8043939(B2) |
申请公布日期 |
2011.10.25 |
申请号 |
US20100862197 |
申请日期 |
2010.08.24 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;MIYANAGA AKIHARU;INADA KO;IWAKI YUJI |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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