发明名称 METHOD OF ERASING A NON VOLATILE MEMORY DEVICE
摘要 PURPOSE: A deletion method for a nonvolatile memory device capable of simultaneously detecting even and odd bit lines is provided to shorten the entire deletion time and verification time by selecting the event and the odd bit lines when verifying deletion. CONSTITUTION: An eliminating method for a nonvolatile memory device capable of simultaneously detecting an even bit line and an odd bit line eliminates the selected memory block. The entire bit line of a memory block is pre-charged and the voltage of all of the bit lines is changed according to the blank state of the memory cells(S303). The data is read according to the voltage level of the first bit line(S305) and of the second bit line(S307). Deletion is verivied according to the read result.
申请公布号 KR20090120677(A) 申请公布日期 2009.11.25
申请号 KR20080046604 申请日期 2008.05.20
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, YOUNG SOO
分类号 G11C16/14;G11C16/16;G11C16/24;G11C16/34 主分类号 G11C16/14
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