摘要 |
Disclosed is a method for manufacturing a group III semiconductor luminescent device. The method comprises the following steps: growing a substrate, a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in sequence from bottom to top to form an epitaxial structure; depositing a transparent conducting layer on the p-type nitride semiconductor layer, and defining boss patterns by using a yellow-light etching process, so as to obtain a boss; depositing an insulation layer on the upper surface of the transparent conducting layer and a surface of the boss; defining patterns of a P-type electrode and an N-type electrode by using a yellow-light stripping process, and depositing the P-type electrode and the N-type electrode; and finally, thinning, scribing, splintering, testing and sorting a wafer. Compared with a normal high-order installation method, the manufacturing method provided in the present invention has fewer production procedures, shortens the production cycle, greatly reduces the production cost, recovers an active layer below an N-type bonding pad, enlarges the light-emitting area, lowers the operating voltage, and increases the brightness. |