| 摘要 |
According to one embodiment, a semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a first electrode; a second electrode; a third electrode; a fourth electrode provided on the first electrode side of the third electrode, and the fourth electrode extending in the second direction; and a first insulating film. The first insulating film is provided between the third electrode and the first semiconductor region, between the third electrode and the second semiconductor region, between the third electrode and the third semiconductor region, and between the fourth electrode and the first semiconductor region. The first insulating film has a first insulating region and a second insulating region. A first width in the first insulating region is different from a second width in the second insulating region. The first insulating region and the second insulating region are arranged in the second direction. |
| 主权项 |
1. A semiconductor device comprising:
a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type and selectively provided on the first semiconductor region; a third semiconductor region of the first conductivity type and selectively provided on the second semiconductor region; a first electrode electrically connected to the first semiconductor region; a second electrode provided on the third semiconductor region, and the second electrode electrically being connected to the third semiconductor region; a third electrode extending in a second direction crossing a first direction from the first electrode toward the second electrode; a fourth electrode provided on the first electrode side of the third electrode, and the fourth electrode extending in the second direction; and a first insulating film
provided between the third electrode and the first semiconductor region, between the third electrode and the second semiconductor region, between the third electrode and the third semiconductor region, and between the fourth electrode and the first semiconductor region,having a first insulating region and a second insulating region provided between the fourth electrode and the first semiconductor region,a first width between the fourth electrode and the first semiconductor region in the first insulating region being different from a second width between the fourth electrode and the first semiconductor region in the second insulating region, andthe first insulating region and the second insulating region being arranged in the second direction. |
