| 主权项 |
1. A surface emitting semiconductor laser comprising:
a substrate; and a semiconductor layer including:
a first semiconductor multilayer film including a plurality of first sets, each set being formed of two layers different from each other in refractive index and thermal conductivity; anda second semiconductor multilayer film the second semiconductor multilayer including a plurality of second sets, each set being formed of two layers different from each other in refractive index and thermal conductivity; andan active layer provided between the first semiconductor multilayer film and the second semiconductor multilayer film, wherein the first semiconductor multilayer film, the second semiconductor multilayer film, and the active layer constitutes a resonator, at least one set in the plurality of first sets and the plurality of second sets is composed of a first layer having a first thermal conductivity, a first composition inclination layer, a second layer having a second thermal conductivity lower than the first thermal conductivity and a second composition inclination layer, and an optical film thickness of the first layer is (2m+1)λ/4, wherein λ is an oscillation wavelength of the resonator and m is an integer, and a total optical film thickness of the first composition inclination layer, the second layer and the second composition inclination layer is (2n+1)λ/4, wherein λ is the oscillation wavelength of the resonator and n is an integer equal to or less than m. |
