| 主权项 |
1. A method for manufacturing a back contact for a photovoltaic module, the method comprising:
forming a semiconductor window layer over a substrate; forming a semiconductor absorber layer over the window layer, the semiconductor absorber layer comprising one of CdTe and CIGS; removing oxides from the absorber layer surface; forming a first metal layer in direct physical contact with the oxide removed surface of the absorber layer, the first metal layer comprising a material selected from the group consisting of molybdenum, tungsten, nickel, cobalt, titanium, molybdenum nitride, titanium nitride, tungsten nitride, mercury tellurium, or any combination thereof; heat treating the first metal layer; and forming a second metal layer adjacent to the first metal layer. |
