Stress Reduction Apparatus

摘要

A device comprises a metal via having a lower portion in a first etch stop layer and an upper portion in a first dielectric layer over a substrate, a second etch stop layer over and in direct contact with the first dielectric layer, a second dielectric layer over and in direct contact with the first etch stop layer, a stress reduction layer over and in direct contact with the second dielectric layer, a third etch stop layer over and in direct contact with the stress reduction layer and a metal structure over the metal via, wherein the metal structure comprises a lower portion in the second etch stop layer and the second dielectric layer and an upper portion in the stress reduction layer, wherein a top surface of the metal structure is level with a top surface of the stress reduction layer.

主权项

1. A method comprising:
forming a metal via over a substrate; depositing a stress reduction layer over the substrate; applying an etching process to the stress reduction layer to form a trench over the metal via; filling the trench with a conductive material to form a metal structure; and forming an etch stop layer on the stress reduction layer and an upper terminal of the metal structure, wherein the upper terminal of the metal structure comprises a flanged portion formed in the stress reduction layer.