发明名称 METHOD OF FABRICATING A MASK USING COMMON BIAS VALUES IN OPTICAL PROXIMITY CORRECTION
摘要 A mask fabricating method includes dividing an outline of a design layout into segments, setting comparison areas with respect to an evaluation point corresponding to each of the segments, for each segment, calculating an overlapping area between the design layout and each of the comparison areas, classifying the segments into groups based on the calculated overlapping areas, wherein segments having a characteristic of the same overlapping area are included in a first group, calculating bias values for each of the segments, obtaining a representative bias value for each group, for each group, assigning the representative bias value obtained for that group to each of its segments, updating the design layout based on the segments with their assigned representative bias values, and fabricating a mask based on the updated design layout.
申请公布号 US2016327856(A1) 申请公布日期 2016.11.10
申请号 US201615090154 申请日期 2016.04.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEONG MOON-GYU;JEON SO-RANG
分类号 G03F1/36;G06F17/50 主分类号 G03F1/36
代理机构 代理人
主权项 1. A mask fabricating method comprising: dividing an outline of a design layout into a plurality of segments; setting one or more comparison areas, each of the comparison areas being formed with respect to an evaluation point corresponding to each of the segments, the comparison areas being different from one another; for each of the segments, calculating an overlapping area between the design layout and each of the comparison areas; classifying the segments into a plurality of groups based on the calculated overlapping areas, wherein segments having a same overlapping area are included in a same group; calculating a bias value for each of the segments; obtaining a representative bias value for each of the groups; for each of the groups, assigning the representative bias value obtained for that group to each of its segments; updating the design layout based on the segments with their assigned representative bias values; and fabricating a mask based on the updated design layout.
地址 SUWON-SI KR