发明名称 |
SOLAR CELL HAVING DOPED SEMICONDUCTOR HETEROJUNCTION CONTACTS |
摘要 |
A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell. |
申请公布号 |
US2016343883(A1) |
申请公布日期 |
2016.11.24 |
申请号 |
US201615230169 |
申请日期 |
2016.08.05 |
申请人 |
SunPower Corporation |
发明人 |
COUSINS Peter John |
分类号 |
H01L31/02;H01L31/18;H01L31/0236;H01L31/0368;H01L31/0376 |
主分类号 |
H01L31/02 |
代理机构 |
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代理人 |
|
主权项 |
1. A solar cell comprising:
a silicon substrate having a front surface and a back surface; a first doped silicon contact over the back surface of the silicon substrate; a second doped silicon contact over the first doped silicon contact and in an opening through the first doped silicon contact, the first and second doped silicon contacts having opposite conductivity types; and a first oxide layer under the first doped silicon contact, under the second doped silicon contact, and in the opening through the first doped silicon contact between the first and second doped silicon contacts. |
地址 |
San Jose CA US |