SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING SEMICONDUCTOR DEVICE

摘要

The reliability of a transistor including an oxide semiconductor can be improved by suppressing a change in electrical characteristics. A transistor included in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region in contact with the gate insulating film, a source region in contact with the second insulating film, and a drain region in contact with the second insulating film. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.

主权项

1. A semiconductor device comprising a transistor, the transistor comprising:
an oxide semiconductor film, the oxide semiconductor film comprising:
a source region;a drain region; anda channel region between the source region and the drain region, a gate insulating film over the oxide semiconductor film; an oxide conductor over the gate insulating film; and a first insulating film over the oxide semiconductor film and the oxide conductor, wherein the oxide conductor includes at least oxygen, In, Zn, and M (M is Al, Ga, Y, or Sn), and wherein the oxide conductor has a higher carrier density than the oxide semiconductor film.