| 发明名称 |
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE |
| 摘要 |
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure. The gate stack includes a first portion and a second portion adjacent to the fin structure, and the first portion is wider than the second portion. |
| 申请公布号 |
US2016343862(A1) |
申请公布日期 |
2016.11.24 |
| 申请号 |
US201514813799 |
申请日期 |
2015.07.30 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHANG Che-Cheng;LIN Chih-Han |
| 分类号 |
H01L29/78;H01L21/3213;H01L29/423;H01L29/66;H01L29/49 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device structure, comprising:
a fin structure over a semiconductor substrate; and a gate stack covering a portion of the fin structure, wherein the gate stack comprises a first portion and a second portion adjacent to the fin structure, and the first portion is wider than the second portion. |
| 地址 |
Hsin-Chu TW |
