| 发明名称 |
NON-VOLATILE MEMORY DEVICE INCLUDING CHARGE TRAPPING LAYER AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A non-volatile memory device includes a charge trapping layer for trapping charges. The charge trapping layer includes a linker layer formed over a substrate and including linkers to be bonded to metal ions metallic nanoparticles formed out of the metal ions over the linker layer and a nitride filling gaps between the metallic nanoparticles. |
| 申请公布号 |
US2016343818(A1) |
申请公布日期 |
2016.11.24 |
| 申请号 |
US201615229737 |
申请日期 |
2016.08.05 |
| 申请人 |
SK INNOVATION CO., LTD. |
发明人 |
KIM Jun-Hyung |
| 分类号 |
H01L29/423;H01L29/51;H01L21/02;H01L29/66;H01L21/28;H01L27/115;H01L29/792 |
主分类号 |
H01L29/423 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A non-volatile memory device, comprising:
a charge trapping layer suitable for trapping charges, wherein the charge trapping layer comprises:
a linker layer formed over a substrate, wherein the linker layer includes multiple linkers that are suitable for bonding to metal ions; metallic nanoparticles formed out of the metal ions over the linker layer; and a nitride covering the metallic nanoparticles. |
| 地址 |
Seoul KR |
