SEMICONDUCTOR DEVICE WITH METAL EXTRUSION FORMATION

摘要

Embodiments disclose a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method of fabrication includes depositing a first conductive material on a semiconductor substrate. A first dielectric material is deposited on the first conductive material. A second conductive material is deposited on the first dielectric material. The top plate is formed by etching the second conductive material. The bottom plate is formed by etching a portion of the first conductive material. At least one opening is formed in the first dielectric layer down to the first conductive material.

主权项

1. A method of fabricating a semiconductor structure comprising an annealed metal layer, the method comprising:
depositing a first conductive material on a semiconductor substrate; depositing a first dielectric material on the first conductive material; forming at least one opening in the first dielectric layer down to the first conductive material; and forming vertical extrusions in the first conductive material within the at least one opening in the first dielectric layer.