发明名称 OLED DISPLAY DEVICE AND MANUFACTURE METHOD THEREOF
摘要 The present invention provides an OLED display device and a manufacture method thereof, and the OLED display device comprises a first substrate (100), a second substrate (200) spaced and oppositely located with the first substrate (100), a plurality of thin film transistors (101) located at an inner surface of the first substrate (100), a transparent anode (201) located at an inner surface of the second substrate (200), a plurality of partition walls (202) located on the transparent anode (201), transmission holes (203) formed among the partition walls (202), an organic layer (204) located on the transparent anode (201) and in the transmission holes (203), a metal cathode (205) located on the organic layer (204) and the partition walls (202), and the metal cathode (205) is electrically connected to a drain of the thin film transistor (101). The OLED display device possesses a high aperture ratio and high transmittance. The manufacture method of the OLED display device provided by the present invention can manufacture an OLED display device with a high aperture ratio and high transmittance, and promote the yield and the productivity.
申请公布号 US2016343785(A1) 申请公布日期 2016.11.24
申请号 US201514424965 申请日期 2015.02.09
申请人 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 SHI Longqiang;WANG Yifan
分类号 H01L27/32;H01L51/56;H01L51/00;H01L51/52 主分类号 H01L27/32
代理机构 代理人
主权项 1. An OLED display device, comprising: a first substrate, a second substrate spaced and oppositely located with the first substrate, a plurality of thin film transistors located at an inner surface of the first substrate, a transparent anode located at an inner surface of the second substrate, a plurality of partition walls located on the transparent anode, transmission holes formed among the partition walls, an organic layer located on the transparent anode and in the transmission holes, a metal cathode located on the organic layer and the partition walls, and the metal cathode is electrically connected to a drain of the thin film transistor.
地址 Shenzhen, Guangdong CN