MONOLITHIC ACTIVE PIXEL RADIATION DETECTOR WITH SHIELDING TECHNIQUES

摘要

A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

主权项

1. A thick SOI radiation detector, said detector comprising:
a high resistivity wafer substrate with a thick silicon layer configured thereon; at least one first island implanted in said silicon layer on top of said high resistivity wafer substrate to form locations for a first transistor type; at least one second island of second transistor type that is an opposite type with respect to said at least one first island; a second transistor type embedded in said at least one island of said opposite type; and connections through said thick silicon layer to diodes established in said high resistivity wafer substrate to thereafter implement detector electronics and shielding thereof by said thick silicon layer.