发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A method of manufacturing a semiconductor device includes: forming lower-layer wirings for a transistor, a circuit element and a plurality of contact pads on a substrate independently of each other; forming a first feed layer over an entire surface of the substrate on which the lower-layer wirings are formed; patterning the first feed layer to form a test pattern connecting terminals of the transistor to the separate contact pads independently of the circuit element; making a test on the transistor in a stand-alone state by using the contact pad and the test pattern; and after the test, connecting the transistor and the circuit element to form a circuit.
申请公布号 US2016343624(A1) 申请公布日期 2016.11.24
申请号 US201615091423 申请日期 2016.04.05
申请人 Mitsubishi Electric Corporation 发明人 SUMINO Tasuku;HISAKA Takayuki;NAKAMOTO Takahiro
分类号 H01L21/66;H01L21/8234 主分类号 H01L21/66
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor device comprising: forming lower-layer wirings for a transistor, a circuit element and a plurality of contact pads on a substrate independently of each other; forming a first feed layer over an entire surface of the substrate on which the lower-layer wirings are formed; patterning the first feed layer to form a test pattern connecting terminals of the transistor to the separate contact pads independently of the circuit element; making a test on the transistor in a stand-alone state by using the contact pad and the test pattern; and after the test, connecting the transistor and the circuit element to form a circuit.
地址 Tokyo JP