发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a semiconductor device includes: forming lower-layer wirings for a transistor, a circuit element and a plurality of contact pads on a substrate independently of each other; forming a first feed layer over an entire surface of the substrate on which the lower-layer wirings are formed; patterning the first feed layer to form a test pattern connecting terminals of the transistor to the separate contact pads independently of the circuit element; making a test on the transistor in a stand-alone state by using the contact pad and the test pattern; and after the test, connecting the transistor and the circuit element to form a circuit. |
申请公布号 |
US2016343624(A1) |
申请公布日期 |
2016.11.24 |
申请号 |
US201615091423 |
申请日期 |
2016.04.05 |
申请人 |
Mitsubishi Electric Corporation |
发明人 |
SUMINO Tasuku;HISAKA Takayuki;NAKAMOTO Takahiro |
分类号 |
H01L21/66;H01L21/8234 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device comprising:
forming lower-layer wirings for a transistor, a circuit element and a plurality of contact pads on a substrate independently of each other; forming a first feed layer over an entire surface of the substrate on which the lower-layer wirings are formed; patterning the first feed layer to form a test pattern connecting terminals of the transistor to the separate contact pads independently of the circuit element; making a test on the transistor in a stand-alone state by using the contact pad and the test pattern; and after the test, connecting the transistor and the circuit element to form a circuit. |
地址 |
Tokyo JP |