CHAMBER CLEANING AND SEMICONDUCTOR ETCHING GASES

摘要

The present invention relates to fluoroolefin compositions useful as gases for CVD semiconductor manufacture, particularly for etching applications including methods for removing surface deposits from the interior of a chemical vapor deposition chamber by using an activated gas mixture, and methods for etching the surface of a semiconductor.

主权项

1. An etch gas mixture, comprising at least one fluoroolefin and oxygen,
wherein said hydrofluoroolefin is selected from the group consisting of CHF═CF2, Z—CF3-CF═CHF, Z—CF3-CF═CHF, CF3-CH═CF2, CF3-CF═CH2, CF3-CH═CHF, CF2=CH—CHF, CF2=CF—CF3, Z—CF3-CH═CH—CF3, E-CF3-CH═CHCF3, CF3-CF2-CH═CHF, CF3-CF2-CH═CHF, CH2=CF—CF2-CF3, CHF2-CF═CF—CHF2, Z—CF3-CF═CF—CF3, E-CF3-CF═CF—CF3, CF3-CF═CH—CF3, CF3-CF═CH—CF3, CHF═CF—CF2-CF3, CHF═CF—CF2-CF3, CF2=CF—CHF—CF3, CF2=CF—CF═CF2, CHF═C(CF3)2, CF2=C(CF3)(CHF2), CF2=CH—CH2-CF3, CH2=CF—CF2-CHF2, CF2=CF—CHF—CH2F, CF2=CFCH2CHF2, CHF═CF—CHF—CHF2, CHF2-CF═CH—CHF2, CHF2-CF═CF—CH2F, CHF2-CF═CF—CH2F, CHF2-CH═CF—CHF2, CHF2-CH═CF—CHF2, and CF3C≡CCF3,CHCl═CH—CF3.