发明名称 |
POWER AMPLIFIER MODULES INCLUDING RELATED SYSTEMS, DEVICES, AND METHODS |
摘要 |
One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and tantalum nitride terminated through wafer via. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. A metal layer in the tantalum nitride terminated through wafer via is included in an electrical connection between the power amplifier on a front side of a substrate and a conductive layer on a back side of the substrate. Other embodiments of the module are provided along with related methods and components thereof. |
申请公布号 |
US2016380602(A1) |
申请公布日期 |
2016.12.29 |
申请号 |
US201615260015 |
申请日期 |
2016.09.08 |
申请人 |
Skyworks Solutions, Inc. |
发明人 |
Zampardi, JR. Peter J.;Sun Hsiang-Chih;Shen Hong;Janani Mehran;Riege Jens Albrecht |
分类号 |
H03F3/213;H01L29/737;H01L29/08;H01L29/205;H01L27/06;H01L23/498;H01L29/66;H01L21/8249;H01L21/8252;H01L23/00;H01L21/48;H01L21/56;H01L21/78;H01L21/66;H01L23/552;H01L23/31;H03F3/195;H01L23/66 |
主分类号 |
H03F3/213 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
Woburn MA US |