| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern drawing apparatus and a pattern drawing method that can detect and process abnormality related to the dose of a beam efficiently and in substantially real time during the drawing operation, and to provide a method for performing abnormality diagnosis including estimation of causes of the abnormality. <P>SOLUTION: A detector 19 detects reflected and scattered electrons that are generated by applying an electron beam 54 onto a substrate 2. A calculation section 25a calculates the product of the area (S<SB POS="POST">N</SB>) and exposure time (t<SB POS="POST">N</SB>) of an N-th shot at a predetermined unit obtained from pattern drawing data. A comparator 24 compares a value obtained by accumulating designation amount equivalent value for each predetermined unit with a value obtained by integrating signal (D<SB POS="POST">N</SB>) from the detector 19 at a predetermined unit, and judges whether abnormality has occurred in relation to the dose of the electron beam 54. <P>COPYRIGHT: (C)2012,JPO&INPIT |
