HETERO STRUCTURE TYPE FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a hetero structure type field effect transistor having excellent various type characteristics, excellent long term stability and high reliability. SOLUTION: A Schottky junction forming layer (2) and a carrier supply layer (3) are constituted of different materials conforming their operations, respectively. Thus, good gate characteristics and the long term stability as an FET are allowed to be compatible.