| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for treating surface of silicon substrate by which a clean silicon substrate can be obtained by well removing fine damages caused by working and organic matters, metallic impurities, and fine particles adhering to the surface of the substrate through a small number of steps and, in addition, the fraction non-defective after film formation can be improved. SOLUTION: This method includes a step 11 of dipping the silicon substrate in a mixed solution of hydrogen peroxide and ammonium hydroxide, etc., a step 12 of dipping the silicon substrate dipped in the mixed solution in at least one oxidizing liquid selected from among a dissolved ozone aqueous solution, nitric acid, and hydrogen peroxide, and a step 13 of dipping the silicon substrate dipped in the oxidizing liquid in a mixed solution of an organic acid or its salt and hydrofluoric acid. The method also includes a step 14 of dipping the silicon substrate dipped in the mixed solution in the step 13 in a liquid containing the organic acid or its salt and rinsing steps using extremely pure water among the steps 11, 12, 13 and 14.
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