| 摘要 |
A semiconductor memory comprises a gate electrode formed on a gate oxide film formed in each of active regions on a principal surface of a semiconductor substrate, grooves formed in self alignment with the gate electrode and to penetrate the inside of the semiconductor substrate, a buried digit line formed of a diffused layer which is formed at an inner surface of each of the grooves and which is of a conductivity type opposite to that of the semiconductor substrate, a CVD oxide film formed to cover the surface of each of the grooves and at least a portion of a side surface of the gate electrode, a BPSG film filled up in the grooves, and a word line formed on the principal surface of the semiconductor substrate to extend orthogonally to the grooves, and constituting the gate electrode on the active region and functioning as an interconnection layer on the grooves.
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