| 摘要 |
<p>A method for forming a pattern of a semiconductor device is provided to enhance resolution and contrast of the semiconductor device by forming the pattern on an overlapped portion between two photo masks. Photoresist(140) is applied on a semiconductor substrate(130). A first photo mask(110) and a second photo mask(120) are arranged on the photoresist, such that the first and second photo masks are overlapped with each other. The photoresist is selectively exposed at an overlapped region between the first and second photo masks by illuminating light on front surfaces of the first and second photo masks. The exposed photoresist is developed, such that a photoresist pattern is formed. The light is a KrF excimer laser.</p> |
