| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element excellent in current diffusion characteristics and light extracting efficiency, and to provide a manufacturing method thereof and a lamp. <P>SOLUTION: In the semiconductor light-emitting element 1, an n-type semiconductor layer 12, a light-emitting layer 13, a p-type semiconductor layer 14, a titanium oxide-based conductive film layer 15 and a translucent film layer 16 are laminated in this order. In this element 1, an uneven surface is formed on at least one part of the surface of the titanium oxide-based conductive film layer 15. <P>COPYRIGHT: (C)2007,JPO&INPIT |
