发明名称 Non-volatile storage unit and non-volatile storage device
摘要 A non-volatile storage device adopt memristors to store data and uses fewer transistors to realize the same circuit function, whereby to decrease the chip area and reduce the time and energy spent in initiating the device. Further, the non-volatile storage device disposes appropriate electronic elements in the spacing between adjacent memristors to meet the layout design rule and achieve high space efficiency in the chip lest the space between memristors be wasted.
申请公布号 US9362337(B1) 申请公布日期 2016.06.07
申请号 US201514863844 申请日期 2015.09.24
申请人 NINGBO ADVANCED MEMORY TECHNOLOGY CORP.;BEING ADVANCED MEMORY TAIWAN LIMITED 发明人 Wu Jui-Jen;Chang Jiah-Wang;Huang Sheng-Tsai;Jien Fan-Yi
分类号 H01L47/00;H01L27/24;H01L27/22;H01L27/115 主分类号 H01L47/00
代理机构 Muncy, Geissler, Olds & Lowe, P.C. 代理人 Muncy, Geissler, Olds & Lowe, P.C.
主权项 1. A non-volatile storage unit, comprising: a first memristor having a first end and a second end, wherein the first end of the first memristor is connected with a bit line; a first switch having a first end, a second end and a control end, wherein the first end of the first switch is connected with the second end of the first memristor, and the control end of the first switch is connected with a read-word line; a second memristor having a first end and a second end, wherein the first end of the second memristor is connected with the second end of the first switch, and the second end of the second memristor is connected with a bit line bar; and a write-data circuit electrically coupled to the first end of the first switch, the second end of the first switch, a program line and a system ground terminal.
地址 Jubei, Hsinchu County TW