PREPARATION METHOD FOR FLAT CELL ROM DEVICE

摘要

A preparation method for a flat cell ROM device, comprising the steps of: providing a substrate, and forming a P well on the substrate; forming a photomask layer on the P well, and performing photoetching to form an injection window; injecting P-type ions in the formed injection window to form a P-type region; injecting N-type ions in the formed injection window so as to form an N-type region on the P-type region; and forming a gate oxidation layer and a poly-silicon gate so as to complete preparation of a device.