METHOD FOR PRODUCING EPITAXIAL SILICON CARBIDE WAFER

摘要

The present invention provides a method for producing an epitaxial silicon carbide wafer comprising epitaxially growing SiC on an SiC substrate to produce an epitaxial SiC wafer during which further reducing stacking faults and comet defects than the conventional technologies to obtain an epitaxial SiC wafer having a high quality epitaxial film. The method for producing the epitaxial silicon carbide wafer is characterized in that a pre-growth atmosphere gas flowing into the growth furnace before the start of epitaxial growth contains hydrogen gas and has a balance of an inert gas and unavoidable impurities, and the hydrogen gas is contained in 0.1 to 10.0 vol % with respect to the inert gas.

主权项

1. A method for producing an epitaxial silicon carbide wafer comprising epitaxially growing silicon carbide on a silicon carbide monocrystalline substrate in a growth furnace by thermal CVD,
in which method for producing an epitaxial silicon carbide wafer, a pre-growth atmosphere gas flowing into the growth furnace before the start of epitaxial growth contains hydrogen gas and has a balance of an inert gas and unavoidable impurities, and said hydrogen gas is contained in 0.1 to 10.0 vol % with respect to the inert gas.