SEMICONDUCTOR DEVICES INCLUDING AUXILIARY BIT LINES

摘要

Semiconductor devices are provided. A semiconductor device includes a stack of alternating gates and insulating layers. The semiconductor device includes a dummy cell region. The semiconductor device includes a plurality of bit lines and a plurality of auxiliary bit lines. Some of the plurality of auxiliary bit lines have different respective lengths. Related methods of forming semiconductor devices are also provided.

主权项

1. A semiconductor device comprising:
a stack of alternating gates and insulating layers; a vertical channel in the stack; a dummy cell region spaced apart from the vertical channel; first through fourth auxiliary bit lines overlapping the stack, wherein the first auxiliary bit line is electrically connected to the vertical channel; a first bit line overlapping and electrically connected to the first and second auxiliary bit lines, wherein a first length of the first auxiliary bit line is either longer or shorter than a second length of the second auxiliary bit line; and a second bit line overlapping and electrically connected to the third and fourth auxiliary bit lines, wherein a third length of the third auxiliary bit line is either longer or shorter than a fourth length of the fourth auxiliary bit line, wherein the first and second bit lines and the first through fourth auxiliary bit lines are in first and second cell regions, and wherein the dummy cell region is between the first and second cell regions that have the first and second bit lines and the first through fourth auxiliary bit lines therein.