| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a metal nanodot in a fine and approximately uniform distribution by a CVD method.SOLUTION: The forming method of the metal nanodot includes: a deposition process for forming the metal nanodot by introducing ruthenium carbonyl gas as mixed gas with CO gas into a treatment vessel 1 by supplying CO gas as carrier gas, into a material vessel 41 for accommodating solid ruthenium carbonyl as a raw material from a CO gas vessel 43 for accommodating CO gas, and decomposing the ruthenium carbonyl on a wafer W; and a CO gas introducing process for directly introducing the CO gas into the treatment vessel 1 from the CO gas vessel 43 in a state when the mixed gas is stopped to introduce into the treatment vessel 1, and the CO gas is contacted to a surface of the wafer W. Preferably, the deposition process and the CO gas introducing process are repeated in a plurality of times.SELECTED DRAWING: Figure 2 |
