| 发明名称 |
Bipolar transistor having integrated thermistor shunt |
| 摘要 |
A bipolar transistor includes a chip having a base electrode and an emitter electrode on a surface thereof and a film resistor provided on a surface of the chip and electrically connecting the base electrode and the emitter electrode to each other, the film resistor having a negative resistance characteristic with temperature change.
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| 申请公布号 |
US5847436(A) |
申请公布日期 |
1998.12.08 |
| 申请号 |
US19970848241 |
申请日期 |
1997.04.29 |
| 申请人 |
KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO |
发明人 |
IWATA, HITOSHI |
| 分类号 |
H01L27/02;H02H9/02;H03K17/08;H03K17/082;(IPC1-7):H01L31/08;H01L7/00 |
主分类号 |
H01L27/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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