发明名称 METHOD FOR DETECTING SEMICONDUCTOR MANUFACTURING CONDITIONS
摘要 A method for detecting semiconductor-manufacturing conditions includes providing a photomask with a plurality of pattern areas each having a plurality of test lines with different pitches, exposing a plurality of wafer with the photomask in different manufacturing conditions, measuring the critical dimensions of the plurality of pattern areas, generating a library of relationships between the pitches and the critical dimension of the pattern areas, exposing a test wafer in an unknown manufacturing condition, finding out a relationships between the pitches and the critical dimension of the pattern areas of the test wafer, searching for a most similar relationship in the library, and detecting a set of manufacturing parameters used to expose the test wafer.
申请公布号 US2007220458(A1) 申请公布日期 2007.09.20
申请号 US20060308343 申请日期 2006.03.17
申请人 ZHOU WEN-ZHAN;YU JIN;SEE KAI-HUNG ALEX 发明人 ZHOU WEN-ZHAN;YU JIN;SEE KAI-HUNG ALEX
分类号 G06F17/50 主分类号 G06F17/50
代理机构 代理人
主权项
地址