发明名称 FIELD EFFECT TRANSISTOR, DEVICE INCLUDING THE TRANSISTOR, AND METHODS OF FORMING AND USING SAME
摘要 The present disclosure provides an improved field effect transistor and device that can be used to sense and characterize a variety of materials. The field effect transistor and/or device including the transistor may be used for a variety of applications, including genome sequencing, protein sequencing, biomolecular sequencing, and detection of ions, molecules, chemicals, biomolecules, metal atoms, polymers, nanoparticles and the like.
申请公布号 US2016258941(A1) 申请公布日期 2016.09.08
申请号 US201615156213 申请日期 2016.05.16
申请人 Takulapalli Bharath 发明人 Takulapalli Bharath
分类号 G01N33/543;H01L29/10;H01L21/306;G01N33/552;G01N27/414;G01N33/487;C12Q1/68;H01L29/06;H01L29/66 主分类号 G01N33/543
代理机构 代理人
主权项 1. (canceled)
地址 Chandler AZ US