发明名称 BOND PAD STRUCTURE FOR BONDING IMPROVEMENT
摘要 Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3DIC includes a first substrate including a photodetector which is configured to receive light in a first direction from a light source. An interconnect structure is disposed over the first substrate, and includes a plurality of metal layers and insulating layers that are over stacked over one another in alternating fashion. One of the plurality of metal layers is closest to the light source and another of the plurality of metal layers is furthest from the light source. A bond pad recess extends into the interconnect structure from an opening in a surface of the 3DIC which is nearest the light source and terminates at a bond pad. The bond pad is spaced apart from the surface of the 3DIC and is in direct contact with the one of the plurality of metal layers that is furthest from the light source.
申请公布号 US2016379962(A1) 申请公布日期 2016.12.29
申请号 US201615088232 申请日期 2016.04.01
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Huang Sin-Yao;Wang Ching-Chun;Yaung Dun-Nian;Hung Feng-Chi;Wang Ming-Tsong;Chou Shih Pei
分类号 H01L25/065;H01L27/146 主分类号 H01L25/065
代理机构 代理人
主权项 1. An integrated circuit (IC), comprising: a first substrate including a photodetector which is configured to receive light in a first direction from a light source; an interconnect structure over the first substrate, and including a plurality of metal layers and insulating layers that are over stacked over one another in alternating fashion, wherein one of the plurality of metal layers is closest to the light source and another of the plurality of metal layers is furthest from the light source; and a bond pad recess extending into the interconnect structure from an opening in a surface of the IC which is nearest the light source and terminating at a bond pad, wherein the bond pad is spaced apart from the surface of the IC and is in direct contact with the another of the plurality of metal layers that is furthest from the light source.
地址 Hsin-Chu TW