SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device includes: a pad electrode 9a formed in an uppermost layer of a plurality of wiring layers; a base insulating film 11 having an opening 11a on the pad electrode 9a; a base metal film UM formed on the base insulating film 11; a redistribution line RM formed on the base metal film UM; and a cap metal film CM formed so as to cover an upper surface and a side surface of the redistribution line RM. In addition, in a region outside the redistribution line RM, the base metal film UM made of a material different from that of the redistribution line RM and the cap metal film CM made of a material different from the redistribution line RM are formed between the cap metal film CM formed on the side surface of the redistribution line RM and the base insulating film 11, and the base metal film UM and the cap metal film CM are in direct contact with each other in the region outside the redistribution line RM.

主权项

1. A semiconductor device comprising:
a semiconductor substrate: a plurality of wiring layers formed over the semiconductor substrate; a pad electrode formed in an uppermost layer of the plurality of wiring layers; an insulating film having an opening on the pad electrode; a base metal film formed on the insulating film; a redistribution line formed on the base metal film; and a cap metal film formed so as to cover an upper surface and a side surface of the redistribution line, wherein the base metal film is formed between the cap metal film formed on the side surface of the redistribution line and the insulating film in a region outside the redistribution line, the redistribution line and the base metal film are made of different materials, the redistribution line and the cap metal film are made of different materials, and the base metal film and the cap metal film are in direct contact with each other in the region outside the redistribution line.