WIRING SUBSTRATE AND SEMICONDUCTOR DEVICE

摘要

A wiring substrate includes a first reinforcement pattern stacked on a lower surface of a first insulation layer at a peripheral region located at an outer side of a wiring formation region. A first reinforcement via extends through a second insulation layer in the thickness-wise direction and contacts the first reinforcement pattern. A second reinforcement pattern is stacked on a lower surface of the second insulation layer and connected to the first reinforcement pattern by the first reinforcement via. The first reinforcement via includes a top that partially extends into the first insulation layer.

主权项

1. A wiring substrate comprising:
a first insulation layer; a first wiring layer stacked on a lower surface of the first insulation layer; a first reinforcement pattern stacked on the lower surface of the first insulation layer at a peripheral region located at an outer side of a wiring formation region where the first wiring layer is formed; a second insulation layer stacked on the lower surface of the first insulation layer to cover the first wiring layer; a first reinforcement via that extends through the second insulation layer in a thickness-wise direction and contacts the first reinforcement pattern; and a second reinforcement pattern stacked on a lower surface of the second insulation layer and connected to the first reinforcement pattern by the first reinforcement via, wherein the first reinforcement via includes a top that partially extends into the first insulation layer.