| 发明名称 |
GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING ARC OR SILICON OXYNITRIDE TO DIFFERENT FILMS OR MASKS |
| 摘要 |
A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a target layer composed of silicon and either (1) organic material or (2) both oxygen and nitrogen, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes exposing the surface of the workpiece to a chemical environment containing N, H, and F at a first setpoint temperature to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature to remove the chemically treated surface region of the target layer. |
| 申请公布号 |
US2016379842(A1) |
申请公布日期 |
2016.12.29 |
| 申请号 |
US201615191956 |
申请日期 |
2016.06.24 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
Kal Subhadeep;Mohanty Nihar;Raley Angelique D.;Mosden Aelan;Lefevre Scott W. |
| 分类号 |
H01L21/311;H01L21/67 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for the dry removal of a material on a microelectronic workpiece, comprising:
receiving a workpiece having a surface exposing a target layer composed of silicon and either (1) organic material or (2) both oxygen and nitrogen; and selectively removing at least a portion of the target layer from the workpiece by performing the following:
exposing the surface of the workpiece to a chemical environment containing N, H, and F at a first setpoint temperature to chemically alter a surface region of the target layer, andthen, elevating the temperature of the workpiece to a second setpoint temperature to remove the chemically treated surface region of the target layer. |
| 地址 |
Tokyo JP |
